SYSTEMS AND METHODS FOR PATTERNING FEATURES IN TANTALUM NITRIDE (TaN) LAYER

摘要

Embodiments of systems and methods for patterning features in tantalum nitride (TaN) are described. In an embodiment, the method may include receiving a substrate comprising a TaN layer. The invention may also include etching the substrate to expose at least a portion of the TaN layer. Additionally, the present invention may include performing a passivation process to reduce lateral etching of the TaN layer. The present invention may further include etching the TaN layer to form features therein, wherein the passivation process is controlled to meet one or more target passivation goals.