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Enhanced Infrared Photodiodes Based on PbS/PbClx Core/Shell Nanocrystals

机译:基于PBS / PBCLX核/壳纳米晶体的增强的红外光电二极管

摘要

Photodiodes configured to convert incident photons in the short-wave infrared (SWIR) to electric current, where the photodiodes have a PbS/PbClx core/shell nanocrystal absorber layer. The PbClx shell in the PbS/PbClx nanocrystals provide native passivation in the (100) crystal facets and enable removal of native ligands and ligand exchange on the (111) crystal facets of the PbS/PbClx nanocrystals such that the photodiode exhibits reduced current densities under reverse bias and greater infrared photoresponse, providing improved device performance as compared to photodiodes having absorber layers formed from PbS core nanocrystals alone.
机译:配置为将在短波红外(SWIR)中的入射光子转换为电流,其中光电二极管具有PBS / PBCLX核/壳纳米晶体吸收层。 PBS / PBCLX纳米晶体中的PBCLX壳在(100)晶面上提供了本机钝化,并能够去除PBS / PBCLX纳米晶体的(111)晶面上的天然配体和配体交换,使得光电二极管表现出降低的电流密度 反向偏置和更大的红外光响应,与单独的PBS核心纳米晶体形成的吸收层相比,提供改进的器件性能。

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