DRAM BANDWIDTH INCREASE WITHOUT PER PIN BANDWIDTH INCREASE

摘要

A dynamic random access memory (DRAM) includes first and second data buses, and first and second command and address (C/A) buses. The first data bus conveys a write data to the DRAM. The second data bus conveys read data from the DRAM. The first and second C/A buses are respectively associated with the first and second data buses. In one embodiment, the first data bus conveys the write data to a first bank of memory of the DRAM simultaneously as the second data bus conveys the read data from a second bank of memory of the DRAM. In another embodiment, the first data bus conveys the write data to a first rank of memory of the DRAM simultaneously as the second data bus conveys read data from a second rank of memory of the DRAM.