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MILLIMETER-WAVELENGTH POWER AMPLIFIERS HAVING BOTH HIGH POWER GAIN AND HIGH OUTPUT POWER

机译:毫米波功率放大器具有高功率增益和高输出功率

摘要

A power amplifier (amp) is disclosed. This power amp can include a first transistor configured in the common source (CS) amplification mode, wherein the gate terminal of the first transistor is used as the input port of the power amp; and a second transistor configured in the common gate (CG) amplification mode, wherein the drain terminal of the second transistor is used as the output port of the power amp. The power amp also includes a first inductive component coupled between the drain terminal of the first transistor and the ground to increase the impedance between the drain terminal of the first transistor and the ground, thereby increasing an output power at the output port. The power amp additionally includes a second inductive component coupled between the drain terminal of the first transistor and the source terminal of the second transistor to increase the conductance in the output admittance at the output port, thereby further increasing the output power at the output port.
机译:公开了一种功率放大器(AMP)。 该功率放大器可以包括配置在公共源(CS)放大模式中的第一晶体管,其中第一晶体管的栅极端子用作功率放大器的输入端口; 和配置在公共栅极(CG)放大模式中的第二晶体管,其中第二晶体管的漏极端子用作功率放大器的输出端口。 功率放大器还包括耦合在第一晶体管的漏极端子和地之间的第一感应部件,以增加第一晶体管和地的漏极端子之间的阻抗,从而增加输出端口处的输出功率。 功率放大器另外包括耦合在第一晶体管的漏极端子和第二晶体管的源极端子之间的第二电感元件,以增加输出端口的输出导纳中的电导,从而进一步增加了输出端口处的输出功率。

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