首页> 外国专利> COMPOSITE HEAT INSULATION STRUCTURE FOR MONOCRYSTALLINE SILICON GROWTH FURNACE AND MONOCRYSTALLINE SILICON GROWTH FURNACE

COMPOSITE HEAT INSULATION STRUCTURE FOR MONOCRYSTALLINE SILICON GROWTH FURNACE AND MONOCRYSTALLINE SILICON GROWTH FURNACE

机译:单晶硅生长炉和单晶硅生长炉复合隔热结构

摘要

Disclosed is a composite heat insulation structure for a monocrystalline silicon growth furnace, comprising a supporting layer and a laminated structure on the supporting layer. The laminated structure comprises one or more first refractive layers and one or more second refractive layers which have different refractivity and are disposed alternately. Also disclosed is a monocrystalline silicon growth furnace in which the composite heat insulation structure is disposed on a heat shield. When disposed on a heat shield to be applied to the monocrystalline silicon growth furnace, the composite heat insulation structure can improve ability of the heat shield to reflect heat energy, reduce heat dissipation of silicon melt, and play a role of heat insulation on a heat field, thereby improving the quality of the heat field to improve the quality and yield of monocrystalline silicon.
机译:公开了一种用于单晶硅生长炉的复合隔热结构,包括支撑层上的支撑层和层叠结构。 层叠结构包括一个或多个第一折射层和一个或多个具有不同折射率的第二折射层,并且交替设置。 还公开了一种单晶硅生长炉,其中复合隔热结构设置在隔热罩上。 当设置在待应用于单晶硅生长炉的隔热罩上时,复合隔热结构可以提高隔热罩反映热能的能力,减少硅熔体的散热,并在热量上发挥热绝缘作用 场,从而提高了热场的质量,以提高单晶硅的质量和产量。

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