IGBT DEVICE BACKSIDE STRUCTURE AND PREPARATION METHOD THEREFOR, AND IGBT DEVICE

摘要

Provided in the present disclosure are an IGBT device backside structure and a preparation method therefor, and an IGBT device, the IGBT device backside structure comprising a buffer layer, the buffer layer comprising a first activation efficiency buffer area corresponding to an active area of the IGBT device and a second activation efficiency buffer area corresponding to a terminal area of the IGBT device, the activation efficiency of the first activation efficiency buffer area being less than the activation efficiency of the second activation efficiency buffer area.