INTEGRATED GATE-ALL-AROUND STRUCTURES WITH GERMANIUMDOTIERED NANOBAND-CANNAL STRUCTURES

摘要

Integrated gate all-Around circuit structures with germanium-doped nanowire/nanoband channel structures and processes for manufacturing integrated gate all-Around circuit structures with germanium-doped nanowire/nanoband channel structures are described. An integrated circuitFor example, the circuit structure has a vertical arrangement of nanowires over a substrate. Individuals from the vertical arrangement of nanowires have a relatively higher concentration of germanium at a lateral center of the nanowire than at the lateral ends of the nanowire.