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Improvement of Switching Loss in DC-DC Quadratic Boost Converter

机译:改进DC-DC二次升压转换器中的开关损耗

摘要

In the converter for performing a switching operation for generating and outputting a first DC power supplied from the outside as a second DC power according to the present invention, a MOSFET (SW), an output stage capacitor (C O ), a first capacitor (C 1 ) , output terminal resistance (R O ), output terminal diode ( DO ), a first diode (D 1 ), a second diode (D 2 ), a secondary consisting of a first inductor (L 1 ) and a second inductor (L 2 ) step-up converter 100; The charge pump circuit 200 including the second capacitor C 2 , the third capacitor C 3 , the third diode D 3 , and the fourth diode D 4 , and the charge pumping of the charge pump circuit 200 . It is characterized in that it includes a third inductor (L 3 ) connected in series to the path. In addition, the control method of the DC-DC converter with improved switching power loss includes a second capacitor (C 2 ), a third capacitor (C 3 ) and a third diode (D 3 ), a fourth diode in the secondary step-up converter. (D 4 ) As a method of improving the switching loss of the converter configured to further include, the MOSFET (SW), the fourth diode (D 4 ) is turned on, the first diode (D 1 ), the third diode (D 3 ) and output stage diode (D O ) are turned off to turn off Mode 1 (S100) and MOSFET (SW), second diode (D 2 ), and fourth diode (D 4 ) are turned off The first diode (D 1 ) and the third diode (D 3 ) are turned on and the voltage (V C1) applied to the first capacitor (C 1 ) and the voltage applied to the output terminal resistor (R O ) (V O ) It is characterized in that it includes a Mode 2 step (S200) of transferring energy to the
机译:在转换器中,用于执行用于产生和输出从外部提供的第一DC电力的切换操作作为根据本发明的第二DC功率,MOSFET(SW),输出级电容器(CO),第一电容器(C 1),输出端子电阻(RO),输出端子二极管(DO),第一二极管(D 1),第二二极管(D 2),由第一电感器(L 1)和第二电感器(L 2)升压转换器100;电荷泵电路200包括第二电容器C 2,第三电容器C 3,第三二极管D 3和第四二极管D 4,以及电荷泵电路200的电荷泵。其特征在于它包括串联连接到路径的第三电感器(L 3)。另外,具有改进的开关功率损耗的DC-DC转换器的控制方法包括第二电容(C 2),第三电容器(C 3)和第三二极管(D 3),次级步骤中的第四二极管 - 转换器。 (D 4)作为改进所配置为进一步包括的转换器的切换损耗的方法,MOSFET(SW),第四二极管(D 4)接通,第一二极管(D 1),第三二极管(D 3)和输出级二极管(DO)关闭以关闭模式1(S100)和MOSFET(SW),第二二极管(D 2)和第四二极管(D 4)关闭第一二极管(D 1)并且第三二极管(D 3)接通,并且施加到第一电容器(C 1)的电压(V C1)和施加到输出端子电阻器(RO)(VO)的电压,其特征在于它包括一个将能量转移到的模式2步骤(S200)

著录项

  • 公开/公告号KR102344735B1

    专利类型

  • 公开/公告日2021-12-29

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR1020190139988

  • 发明设计人 최형진;

    申请日2019-11-05

  • 分类号H02M3/07;H02M1;

  • 国家 KR

  • 入库时间 2022-08-24 23:05:18

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