ADVANCED INTEGRATED PASSIVE DEVICE (IPD) WITH THIN-FILM HEAT SPREADER (TF-HS) LAYER FOR HIGH POWER HANDLING FILTERS IN TRANSMIT (TX) PATH

摘要

A semiconductor package is described. The semiconductor package includes a passive substrate and a first integrated passive device (IPD) in a first interlayer-dielectric (ILD) layer on the passive substrate. The semiconductor package also includes a second ILD layer on the first ILD layer. The semiconductor package further includes a second IPD in a third ILD layer on the second ILD layer. The semiconductor package also includes a thermal mitigation structure on inductive elements of the second IPD.