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POWER FIELD EFFECT TRANSISTOR TOPOLOGY AND BOOTSTRAP CIRCUIT FOR INVERTING BUCK-BOOST DC-DC CONVERTER

机译:电源场效应晶体管拓扑和自举电路反相 - 升压DC-DC转换器

摘要

For a buck-boost DC-DC converter with n-type high-side field effect transistor (HSFET), a supply is derived from input and output rails, and this supply maintains a constant differential voltage independent of input supply voltage. The derived supply is used as the high supply (HS) of an HSFET Driver. As such, the HSFET resistance becomes independent of supply variation. A wide range ultra-low IQ (Quiescent current), edge triggered level-shifter provides support to a bootstrapped power stage of the inverting buck-boost DC-DC converter. When p-type HSFET is used, a supply is derived from the input and output supply rails, and this derived supply maintains a constant differential voltage independent to the input supply voltage. The derived supply is used as the low supply (LS) or ‘ground’ of the HSFET Driver. As such, the p-type HSFET resistance becomes independent of supply variation.
机译:对于具有n型高侧场效应晶体管(HSFET)的降压-Boost DC-DC转换器,电源来自输入和输出轨,并且该电源与输入电源电压无关保持恒定的电压。 衍生的电源用作HSFET驱动器的高电源(HS)。 因此,HSFET电阻与供电变化无关。 宽范围的超低IQ(静止电流),边缘触发电平换档器为反相降压-Boost DC-DC转换器的引导功率级提供支持。 当使用P型HSFET时,电源来自输入和输出电源轨,该导出的电源保持独立于输入电源电压的恒定差分电压。 衍生的电源用作HSFET驱动器的低电源(LS)或“地面”。 因此,p型HSFET电阻与供电变化无关。

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