HIGH-UNIFORMITY CRYSTAL GROWTH METHOD AND APPARATUS WITHOUT ANNEALING

摘要

A method for crystal growth, comprising subjecting each reaction material for growing an oxide crystal to a first pretreatment and then weighing the reaction material; after performing a pre-assembly treatment of at least one component of a crystal growth device, placing the reaction material that has been subjected to a second pretreatment into the crystal growth device, wherein the at least one component of the crystal growth device comprises a pot (214), and the pre-assembly treatment comprises subjecting the pot (214) to at least one of coating protection, acid bath washing, and foreign body cleaning; sealing the crystal growth device and then introducing a flowing gas into the interior of the crystal growth device; and adding in real time, a reaction material supplement into the crystal growth device during a crystal growth process.