HIGH-THICKNESS AND LOW-DEFECT SIX-INCH SILICON CARBIDE CRYSTAL GROWTH METHOD SATISFYING INDUSTRIALIZATION PRODUCTION

摘要

The present invention relates to a high-thickness and low-defect six-inch silicon carbide crystal growth method satisfying industrialization production. A new process method suitable for industrial large-scale crystal growth is proposed for various defects that are easily generated during the large-scale industrialization of six-inch silicon carbide crystal growth: characteristics such as an abrupt change in crystal form, a dislocation increase, a low effective crystal yield (not thick enough), and under the premise of the same growth cycle and the same feeding amount, an effective yield of the crystal is not only guaranteed, but the quality of the crystal can be effectively guaranteed to be qualified. The method mainly comprises: steps such as primary temperature rise and primary pressure drop, secondary temperature rise and secondary pressure drop, tertiary temperature rise, thermal field movement, constant-temperature pressure boost, primary temperature reduction, secondary temperature reduction, and final gas extraction and replacement. By means of this process, the thickness of six-inch silicon carbide crystals produced in a single furnace can be greater than or equal to 25 mm, and the generation of abnormal crystal forms and the continuous increase of dislocations can be effectively suppressed.