Disclosed are an III-nitride grooved gate normally-off-type P-channel HEMT device and a manufacturing method therefor. The HEMT device comprises a double-heterojunction structure formed by a first semiconductor, a second semiconductor and a third semiconductor, wherein the double-heterojunction structure has double-2-dimensional hole gases (2DHG); the third semiconductor has a band gap smaller than that of the second semiconductor, with the band gap being easily removed by using photoelectrochemical corrosion (PEC) technology selected according to an energy band, so as to form a groove structure; and the groove structure and a gate electrode structure are arranged in a matching manner, such that 2-dimensional hole gas in an area inside the second semiconductor which corresponds to the bottom of a gate electrode can be depleted. By means of the present application, a grooved gate normally-off-type P-channel HEMT device with a large output current and low on-resistance can be effectively realized.
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