UV SYSTEMS AND METHODS FOR UV-BASED SUPPRESSION OF PLASMA INSTABILITY

摘要

A substrate is positioned within a plasma processing chamber exposed to a plasma generating region. A first plasma is generated in the plasma generating region. The first plasma is configured to cause deposition of a film on the substrate until the film deposited on the substrate reaches a threshold film thickness. The substrate is then exposed to UV radiation to correct defects in the film deposited on the substrate. The UV radiation may be supplied in situ using a UV radiation device disposed in exposure to a second plasma or plasma generating region configured to generate UV radiation. UV radiation can also be supplied ex situ by moving the substrate from the plasma processing chamber to a separate UV radiation device. As the film thickness increases, the substrate can be exposed to UV radiation in a repeated manner to address defects in the deposited film.