Distance measurement accuracy is improved.An avalanche photodiode sensor in one design format contains a first semiconductor substrate (51) and a second semiconductor substrate (52),bonded to a first surface of the first semiconductor substrate, the first semiconductor substrate being a multitude of photoelectric conversion areas (21),which is arranged in a matrix and contains an element separation range (157) to separate the multitude of photoelectric conversion ranges elementally from each other, which contains a multitude of photoelectric conversion ranges a first photoelectric conversion range (21),the Element Separation Area has a first Element Separation Area (157A) and a second Element Separation Area (157B), the first Photoelectric Conversion Area is positioned between the first Element Separation Area and the second Element Separation Area, the first Semiconductor substrate also has a variety of concave-convex areas (181)contains,located on a second surface opposite the first surface and situated between the first element separation area and the second element separation area, and the second semiconductor substrate contains a reading switch connected to each of the photoelectric conversion areas (22).
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