High Dynamic Range Single Photon Avalanche Detector Array on Silicon with Circuitry for Light Detection and Ranging

摘要

An image sensor array includes a substrate and a plurality of pixels. Each pixel includes a single photon avalanche detector (SPAD), a quench device coupled to a respective SPAD and configured to quench an avalanche current, and time measurement circuitry configured to measure a time-of-flight of a photon. The SPAD has a trench coupled to the substrate and having a lattice mismatch with the substrate, and a substantially defect-free region coupled to the trench and configured to generate the avalanche current when the photon is detected in the defect-free region, wherein the trench and the defect-free region form an electrode. An imaging system includes an infrared laser configured to provide a pulse of light, and the image sensor array configured to receive the pulse from the infrared laser.