Layer structure for RF Filters processed using rare earth oxides and epitaxial aluminum nitride

摘要

Problem to be solved: to provide a layer structure for an RF filter processed using rare earth oxide and epitaxial aluminum nitride.The layer structure for the RF filter can be processed using a method for growing rare earth oxides and epitaxial aluminum nitride and layer structures.The layer structure can include an epitaxial crystalline rare earth oxide (REO) layer over the substrate, a first epitaxial electrode layer over the crystalline REO layer, and an epitaxial piezoelectric layer over the first epitaxial electrode layer.The layer structure may further include a second electrode layer over the epitaxial piezoelectric layer.The first electrode layer may include an epitaxial metal.The epitaxial metal can be a single crystal.The first electrode layer may include one or more of rare earth Nickelide and rare earth silicides (resi).Diagram