P-type impurity diffusion composition, manufacturing method thereof, semiconductor element manufacturing method using the same, and solar cell

摘要

Problem to be solved: to provide a p-type impurity diffusion composition capable of uniform diffusion into a semiconductor substrate and a stable storage stability of the coating liquid.At least one resin selected from (a) polyvinyl alcohol and polyethylene oxide(b) solvent andCompounds containing group 13 elementsThe p-type impurity diffusion composition containing the pH of 4 to 6.5, and (b) the solvent contains (B-1) the organic solvent and (b-2) water having a boiling point of 1100.degree. C. or less than 210 A p-type impurity diffusion composition characterized by 10 to 50 mass% in the solvent.No selection