METHOD AND SYSTEM FOR ONLINE MONITORING OF HEALTH STATUS OF INSULATED-GATE BIPOLAR TRANSISTOR MODULE

摘要

A method and a system for online monitoring of a health status of an insulated-gate bipolar transistor (IGBT) module are provided, which belong to the field of IGBT status monitoring. In order to overcome the inability to real-time monitor health statuses of existing IGBT modules, the method of the disclosure includes the following steps. A current sensor is used to measure a collector current of each IGBT module. A collected current value is substituted into a simulation model to obtain a current imbalance rate. A failure module is located according to the current imbalance rate and temperature to achieve the objective of monitoring an IGBT health status.