Process for producing a layer based on aluminum nitride (AlN) on a structure based on silicon or III-V materials

摘要

Title: Method for producing a layer based on aluminum nitride (AlN) on a structure based on silicon or on III-V materials The invention relates to a method for producing a layer based on nitride of aluminum (AlN) on a structure based on silicon (Si) or based on a III-V material, the method comprising several deposition cycles (1) carried out in a plasma reactor (200) comprising a reaction chamber (210 ) inside which is disposed a substrate (70) comprising said structure, each deposition cycle (1) comprising at least the following steps: deposition (10) of aluminum-based species on an exposed surface (70a ) of the structure, the deposition step comprising at least one injection into the reaction chamber (210) of an aluminum-based precursor (Al), nitriding of the exposed surface (70a) of the structure, the nitriding step comprising at least one injection into the reaction chamber (210) of a nitrogen-based precursor (N) and the form ation (32) in the reaction chamber (210) of a nitrogen-based plasma, During the formation (32) of the nitrogen-based plasma, a bias voltage Vbias is applied to the substrate (70) not nothing. Figure for the abstract: Fig.3B