MEMS WITH A HIGH ASPECT RATIO

摘要

The invention relates to a method for producing a semiconductor structure with a cavity, said method comprising the steps: providing a semiconductor substrate which comprises a semiconductor material; carrying out an etching process in order to create, in the semiconductor substrate, a pore structure having a plurality of pores; oxidising the semiconductor material so that a semiconductor oxide material is created on pore surfaces of the plurality of pores and connects adjacent pores of the pore structure; and removing the semiconductor oxide material so that the adjacent pores are connected to one another and so that the cavity is created from the connected pores.