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Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials
Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials
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机译:用于沉积硅掺杂氧化铪作为铁电材料的配方
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摘要
In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursors that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, preferably 2 to 6 mol %, most preferably 3 to 5 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films using the formulations.
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