SPIN ORBIT TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY CONTAINING COMPOSITE SPIN HALL EFFECT LAYER INCLUDING BETA PHASE TUNGSTEN

摘要

A spin orbit torque magnetoresistive random access memory (SOT MRAM) cell includes a magnetic tunnel junction that contains a free layer having two bi-stable magnetization directions, a reference magnetic layer having a fixed magnetization direction, and a tunnel barrier layer located between the free layer and the reference layer, and a nonmagnetic spin Hall effect layer. The spin Hall effect layer may include an alternating stack of beta phase tungsten layers and noble metal nonmagnetic dusting layers. Alternatively or in addition, a hafnium layer may be located between the nonmagnetic spin Hall effect layer and the free layer.