Apparatus and method for manufacturing AIII-BV-crystals free of residual stress and dislocation and substrate wafers made therefrom

摘要

Apparatus 1', 1'', 1' for manufacturing III-V-crystals free of residual stresses and dislocations and wafers 14 made therefrom, from a melt 16 of raw material optionally supplemented with a lattice hardening dopant '' has a first section 4', 4'' comprising a first cross-sectional area, and a second section 6' comprising a second cross-sectional area and for receiving a seed crystal 12 , a crucible (2', 2'', 2''') for receiving a melt (16), wherein the second cross-sectional area is smaller than the first cross-sectional area, the first and second sections being connected to each other Connected to each other either directly or via a third section (8, 8') tapering from the first section towards the second section to crystallize from the seed crystal (12) into a solidified melt in a directed temperature field (T). wherein the first section 4', 4'' of the crucible 2', 2'', 2''' has a central axis M, and the second section 6' has the It is arranged laterally offset v from the central axis M of the first sections 4', 4''.