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ON-CHIP DIPLEXED MULTI-BAND SUBMILLIMETER-WAVE/TERAHERTZ SOURCES

机译:片上路双工多频带倍数波/太赫兹来源

摘要

A solid-state device chip including diodes (generating a higher or lower frequency output through frequency multiplication or mixing of the input frequency) and a novel on-chip diplexing design that allows combination of two or more multiplier or mixer structures operating at different frequency bands within the 50-5000 GHz range within a same chip and/or waveguide. The on-chip diplexing design consists of a single-substrate multiplier chip with two or more multiplying structures each one containing 2 or more Schottky diodes. The diodes in each structure are tuned to one portion of the target frequency band, resulting in the two or more structures working together as a whole as a large broadband multiplier or mixer. Thus, an increase in bandwidth from 10-15% (current state-of-the-art) to at least 40% is achieved. Depending on the target frequencies, each subset of diodes within the chip can be designed to work either as a doubler or a tripler.
机译:包括二极管的固态设备芯片(通过倍频或输入频率的混频产生更高或更低的频率输出)以及新型片上双工设计,其允许两个或更多个乘法器或混合器结构的组合在不同频带上操作在同一芯片和/或波导范围内的50-5000 GHz范围内。片上双工设计由单衬底乘法器芯片组成,其中两个或更多个乘法结构包含2个或更多肖特基二极管。每个结构中的二极管被调谐到目标频带的一部分,导致两个或更多个结构作为大宽带乘法器或混频器一起工作。因此,实现了从10-15%(最新现有技术)到至少40%的带宽增加。根据目标频率,芯片内的每个二极管子集可以设计成作为倍增器或三倍。

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