HYBRID SENSOR INCLUDING PLASMONIC RESONATOR

摘要

A semiconductor structure including a channel (310) connecting a source (302) on the semiconductor substrate (312) and a drain (304) on the semiconductor substrate (312), wherein the channel (310) comprises a plasmonic resonator. A sensor including a plasmonic film, wherein the plasmonic film includes a sensitivity to a known analyte, a semiconductor structure including a source (302) and a drain (304) of a field effect transistor, and an electrical connection between the plasmonic film and a gate of the semiconductor structure. A method of forming a sensor including forming a field effect transistor ("FET") on a semiconductor substrate (312), the field effect transistor including a source (302), a drain (304), and a gate, where the gate includes a plasmonic resonator.