首页> 外国专利> MULTI-GATE LATERAL OVERFLOW INTEGRATION CAPACITOR SENSOR

MULTI-GATE LATERAL OVERFLOW INTEGRATION CAPACITOR SENSOR

机译:多门横向溢流集成电容器传感器

摘要

A pixel circuit includes a photodiode, a floating diffusion, and a conduction gate channel of a multi-gate transfer block disposed in a semiconductor material layer. The multi-gate transfer block is coupled to the photodiode, the floating diffusion, and an overflow capacitor. The multi-gate transfer block also includes first, second, and third gates that are disposed proximate to the single conduction gate channel region. The conduction gate channel is a single region shared among the first, second, and third gates. Overflow image charge generated in the photodiode leaks from the photodiode into the conduction gate channel to the overflow capacitor in response to the first gate, which is coupled between the photodiode and the conduction gate channel, receiving a first gate OFF signal and the second gate, which is coupled between the conduction gate channel and the overflow capacitor, receiving a second gate ON signal.
机译:像素电路包括光电二极管,浮动扩散和设置在半导体材料层中的多栅极传送块的导电栅极通道。多栅极传送块耦合到光电二极管,浮动扩散和溢流电容器。多栅极传送块还包括设置在靠近单导通门沟道区域的第一,第二和第三栅极。传导门通道是在第一,第二和第三栅极之间共享的单个区域。在光电二极管中产生的溢出图像电荷响应于第一栅极从光电二极管泄漏到导通电容器到溢流电容器,该第一栅极耦合在光电二极管和导电栅极通道之间,接收第一栅极关闭信号和第二栅极,耦合在导通栅极通道和溢流电容之间,接收第二栅极上的信号。

著录项

  • 公开/公告号US2021183926A1

    专利类型

  • 公开/公告日2021-06-17

    原文格式PDF

  • 申请/专利权人 OMNIVISION TECHNOLOGIES INC.;

    申请/专利号US201916717768

  • 发明设计人 WOON IL CHOI;KEIJI MABUCHI;

    申请日2019-12-17

  • 分类号H01L27/146;H04N5/355;H04N5/378;

  • 国家 US

  • 入库时间 2022-08-24 19:23:19

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