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Memetic thyristor based logic gate

机译:基于麦克晶闸管的逻辑门

摘要

The logic gate has a first input part (A) and a second input part (B), and further, a first memristor (M1), a second memristor (M2), a third one each having a positive electrode terminal and a negative electrode terminal. It has a memristor (M3) and a fourth memristor (M4). The logic gate has a first output (12) and a second output (14). The memristor is connected in a bulizi configuration. The negative terminal of the first memristor and the positive terminal of the second memristor are commonly connected to the first input, and the negative terminal of the third memristor and the positive terminal of the fourth memristor are common to the second input. Connected to The negative terminal of the second memristor and the negative terminal of the fourth memristor are commonly connected to the first output, and the positive terminal of the first memristor and the positive terminal of the third memristor are common to the second output. Connected to In use, the voltage of the at least one output, ie the potential difference between the first and the second output, corresponds to the result of a logical operation on the voltage applied to the first and the second input. [Selected figure] Figure 2
机译:逻辑门具有第一输入部分(A)和第二输入部分(B),另外,第一忆阻器(M1),第二函数(M2),第三个具有正电极端子和负电极终端。它具有映射器(M3)和第四忆阻器(M4)。逻辑门具有第一输出(12)和第二输出(14)。 Memitristor以Bulizi配置连接。第一存储器的负端子和第二函数器的正极端子通常连接到第一输入,第三函数器的负端子和第四映射器的正端子是共同的第二输入。连接到第二函数的负端子和第四函数的负端子通常连接到第一输出,并且第一存储器的正端子和第三函数的正端子是共同的第二输出。在使用中连接,至少一个输出的电压,即第一和第二输出之间的电位差,对应于施加到第一和第二输入的电压上的逻辑操作的结果。 [所选图]图2

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