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PRETREATMENT METHOD FOR BASE SUBSTRATE, AND METHOD FOR MANUFACTURING LAMINATE USING PRETREATED BASE SUBSTRATE
PRETREATMENT METHOD FOR BASE SUBSTRATE, AND METHOD FOR MANUFACTURING LAMINATE USING PRETREATED BASE SUBSTRATE
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机译:基础基材的预处理方法,以及使用预处理基础基材制造层压体的方法
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摘要
Provided is a method for pretreatment of a group III nitride single crystal substrate having a high Al composition ratio, for manufacturing a high-quality group III nitride thin film. The method includes heating the base substrate at a temperature range of 1000 to 1250°C for no less than 5 minutes under a first mixed gas atmosphere before a layer of a second group III nitride single crystal is grown, wherein the first mixed gas includes hydrogen gas and nitrogen gas; the base substrate includes a layer of a first group III nitride single crystal at least on a surface of the base substrate; the first group III nitride single crystal is represented by a composition formula of Al A Ga B In C N; and the layer of the second group III nitride single crystal is to be grown on the layer of the first group III nitride single crystal.
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机译:提供了一种预处理具有高Al成分比的III族氮化物单晶基板的预处理的方法,用于制造高质量的III族氮化物薄膜。该方法包括在生长第二组III族氮化物单晶的第一混合气体气氛下在1000至1250℃的温度范围内不会小于5分钟的基础基板,其中第一混合气体包括氢气气体和氮气;基础基材至少包括第一组III氮化物单晶的层,该层至少在基础基板的表面上;第一组III氮化物单晶由C n中Al A Ga B的组合式式表示;并且第二组III族氮化物单晶的层在第一组III氮化物单晶层上生长。
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