首页> 外国专利> METHOD OF TEXTURING A SILICON WAFER WITH QUASI-RANDOM NANOSTRUCTURES AND THE SILICON WAFER MANUFACTURED BY THE METHOD, AND A SOLAR CELL COMPRISING THE SAME

METHOD OF TEXTURING A SILICON WAFER WITH QUASI-RANDOM NANOSTRUCTURES AND THE SILICON WAFER MANUFACTURED BY THE METHOD, AND A SOLAR CELL COMPRISING THE SAME

机译:用准随机纳米结构和通过该方法制造的硅晶片纹理硅晶片的方法,以及包括该方法的太阳能电池

摘要

The present invention relates to a method for texturing a silicon wafer, a silicon wafer produced by the method, and a solar cell comprising such a silicon wafer. According to the method of the present invention, there is provided a method for texturing a silicon wafer, comprising the steps of: (a) dispersing two or more kinds of nanoparticles having different sizes on the silicon wafer; (b) etching the silicon wafer exposed between the dispersed nanoparticles; and (c) removing the nanoparticles, wherein the dispersing of the nanoparticles is to form a self-assembled monolayer in which two or more kinds of nanoparticles having different sizes are arranged quasi-randomly. can
机译:本发明涉及一种用于纹理硅晶片的方法,由该方法产生的硅晶片,以及包括这种硅晶片的太阳能电池。根据本发明的方法,提供了一种用于纹理硅晶片的方法,包括以下步骤:(a)分散在硅晶片上具有不同尺寸的两种或更多种纳米颗粒; (b)蚀刻在分散的纳米颗粒之间暴露的硅晶片; (c)除去纳米颗粒,其中纳米颗粒的分散是形成自组装单层,其中具有不同尺寸的两种或更多种具有不同尺寸的纳米颗粒。能够

著录项

  • 公开/公告号KR20210067387A

    专利类型

  • 公开/公告日2021-06-08

    原文格式PDF

  • 申请/专利权人 한국과학기술연구원;

    申请/专利号KR1020190156930

  • 发明设计人 김인호;이도권;이경석;박종극;

    申请日2019-11-29

  • 分类号H01L31/0236;H01L21/306;H01L21/308;H01L31/0216;H01L31/0352;H01L31/18;

  • 国家 KR

  • 入库时间 2022-08-24 19:14:58

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