In some embodiments, a method of forming a metal selenide or metal telluride thin film is provided. According to some methods, a metal selenide or metal telluride thin film is a periodic deposition comprising contacting the substrate with a first vapor phase metal reactant and a second vapor phase selenium or tellurium reactant in at least one cycle alternatingly and continuously. It is deposited on the substrate in the reaction space in the process. In some aspects, a method of forming a three-dimensional architecture on a substrate surface is provided. In some embodiments, the method includes forming a metal selenide or metal telluride interfacial layer between the substrate and the dielectric. In some embodiments, the method includes forming a metal selenide or metal telluride dielectric layer between the substrate and the conductive layer.
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