首页> 外国专利> Wafer placement error detection based on measuring a current through an electrostatic chuck and solution for intervention

Wafer placement error detection based on measuring a current through an electrostatic chuck and solution for intervention

机译:基于测量电流通过静电卡盘和干预解决方案的晶片放置错误检测

摘要

Methods and systems of detection of wafer placement error in a semiconductor processing chamber are disclosed. Methods and systems of interdiction are also disclosed to prevent hardware and wafer damage during semiconductor fabrication if and when a wafer placement error is detected. The method—is based on measuring a slope of current in an electrostatic chuck (ESC), which is correlated to lack of contact between the wafer and the ESC. Wafer placement detection at an early stage, when a heater and an ESC are being set up, gives the option of stopping the process before high power RF plasma is created.
机译:公开了半导体处理室中的晶片放置误差的方法和系统。还公开了互通的方法和系统,以防止在检测晶片放置误差时半导体制造期间的硬件和晶片损坏。该方法基于测量静电卡盘(ESC)中的电流的斜率,其与晶片和ESC之间的缺失相关。在建立加热器和ESC时,在早期阶段处的晶片放置检测,可以选择在创建高功率RF等离子体之前停止该过程。

著录项

  • 公开/公告号US11004710B2

    专利类型

  • 公开/公告日2021-05-11

    原文格式PDF

  • 申请/专利权人 APPLIED MATERIALS INC.;

    申请/专利号US201916431564

  • 发明设计人 HEMANT MUNGEKAR;GANESH BALASUBRAMANIAN;

    申请日2019-06-04

  • 分类号H01J37/32;H01L21/66;H01L21/67;H01L21/683;H01L21/68;

  • 国家 US

  • 入库时间 2022-08-24 18:37:45

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