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SEMICONDUCTOR MODULE, POWER CONVERSION APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR MODULE, AND METHOD FOR MANUFACTURING POWER CONVERSION APPARATUS

机译:半导体模块,电力转换装置,制造半导体模块的方法,以及制造电力转换装置的方法

摘要

Techniques disclosed herein improve the heat-dissipating performance of a semiconductor element provided on an insulating substrate. A semiconductor module related to the techniques disclosed herein is provided with: an insulating substrate having a conductor pattern on at least an upper surface thereof; at least one semiconductor element provided on an upper surface of the conductor pattern; a first bonding material provided in a part of a lower surface of the insulating substrate; and a metal film which has a thermal conductivity higher than that of the first bonding material, and which is provided in another part of the lower surface of the insulating substrate. The metal film is provided on the lower surface of the insulating substrate at a position corresponding to the position at which the semiconductor element is disposed.
机译:这里公开的技术改善了设置在绝缘基板上的半导体元件的散热性能。与本文公开的技术有关的半导体模块设置有:绝缘基板在其上表面上具有导体图案;设置在导体图案的上表面上的至少一个半导体元件;设置在绝缘基板的下表面的一部分中的第一粘合材料;和具有高于第一粘合材料的导热率的金属膜,并且其设置在绝缘基板的下表面的另一部分中。金属膜在绝缘基板的下表面上设置在对应于设置半导体元件的位置的位置。

著录项

  • 公开/公告号WO2021085234A1

    专利类型

  • 公开/公告日2021-05-06

    原文格式PDF

  • 申请/专利权人 MITSUBISHI ELECTRIC CORPORATION;

    申请/专利号WO2020JP39367

  • 发明设计人 YANAGIMOTO TATSUNORI;

    申请日2020-10-20

  • 分类号H01L23/36;

  • 国家 JP

  • 入库时间 2022-08-24 18:36:47

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