FORMATION OF MICROLED MESA STRUCTURES WITH ATOMIC LAYER DEPOSITION PASSIVATED SIDEWALLS, A SELF-ALIGNED DIELECTRIC VIA TO THE TOP ELECTRICAL CONTACT, AND A PLASMA-DAMAGE-FREE TOP CONTACT

摘要

A micro light emitting diode including a mesa comprising an epitaxial structure and having a top surface with an area less than 10 micrometers by 10 micrometers, less than 1 micrometer by 1 micrometer, or less than 0.5 micrometers by 0.5 micrometers; a dielectric on the top surface; and a via hole in the dielectric that is centered or self aligned on the top surface, e.g., perfectly centered or centered within 0.5% of the center of the top surface. In one or more examples, the micro light emitting diode is plasma damage free. Metallization in the via hole is used to electrically contact the micro light emitting diode.