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Race track magnetic memory device and its writing method

机译:赛道磁记忆装置及其写作方法

摘要

PROBLEM TO BE SOLVED: To provide a racetrack magnetic memory device for suppressing a large amount of write current. SOLUTION: The magnetic wire 1 is provided, the magnetic wire 1 includes a plurality of magnetic domains (1a, etc.), a current is passed through the magnetic wire 1 to move a magnetic wall, and the magnetic wire 1 functions as a magnetically moving memory. The track magnetic memory device 100. The racetrack magnetic memory device 100 includes a magnetic tunnel junction (MTJ) element 2 including a fixed layer 22, an insulating layer 23, and a SOT (Spin orbit torque) generation source 3. The easy axis of magnetization of the magnetic thin wire 1 is a specific direction perpendicular to the junction surface between the magnetic thin wire 1 and the SOT generation source 3, and the MTJ element 2 and the SOT generation source 3 are objects to be written in the magnetic domain of the magnetic thin wire 1. It is arranged in the region 14, and while a current is passed through the magnetic tunnel junction element 2 to generate a spin transfer torque, another current is passed through the SOT generation source 3 to generate a spin-orbit torque to perform a writing process. [Selection diagram] Fig. 1
机译:要解决的问题:提供一种用于抑制大量写入电流的跑道磁存储器件。溶液:提供磁线1,磁线1包括多个磁畴(1a等),电流通过磁线1以移动磁壁,并且磁线1用作磁性线移动记忆。轨道磁存储器件100.赛道磁存储器件100包括磁隧道结(MTJ)元件2,包括固定层22,绝缘层23和SOT(自旋轨道扭矩)生成源3.容易的轴磁性薄导线1的磁化是垂直于磁性薄线1和SOT生成源3之间的结表面的特定方向,并且MTJ元件2和SOT生成源3是要写入磁域的物体磁性薄线1.它布置在区域14中,虽然电流通过磁隧道结元件2以产生自旋转移扭矩,但是另一电流通过SOT生成源3以产生旋转轨道扭矩执行写作过程。 [选择图]图1

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