FINANCIAL FIELD EFFECT TRANSISTOR BUILDING AND MANUFACTURING PROCEDURES

摘要

A process for the production of a semiconductor device shall consist of the following steps: the production of a Finn, which is superseded by a substrate; production of insulation areas on opposite sides of the Finns; building a dummy gate over the Finnish; Reduce the thickness of a lower part of the dummy gate near the isolation areas, reducing the distance between the opposite side walls of the lower part of the dummy gate when the dummy gate extends to the isolation areas after reducing the thickness;after reducing the thickness of the manufacture of a gate filling material at least along the opposite side walls of the lower part of the Dummy gate; manufacture of gate spacers along side walls of the Dummy Gate and along side walls of gate filling material; and replace the dummy gate with a metal gate.