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PCRAM ANALOG PROGRAMMING BY A GRADUAL RESET COOLING STEP
PCRAM ANALOG PROGRAMMING BY A GRADUAL RESET COOLING STEP
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机译:PCRAM模拟编程通过逐渐复位冷却步骤
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摘要
In some embodiments, the present disclosure relates a phase change random access memory device that includes a phase change material (PCM) layer disposed between bottom and top electrodes. A controller circuit is coupled to the bottom and top electrodes and is configured to perform a first reset operation by applying a signal at a first amplitude across the PCM layer for a first time period and decreasing the signal from the first amplitude to a second amplitude for a second time period; and to perform a second reset operation by applying the signal at a third amplitude across the PCM layer for a third time period and decreasing the signal from the third amplitude to a fourth amplitude for a fourth time period greater than the second time period. After the fourth time period, the PCM layer has a percent crystallinity greater than the PCM layer after the second time period.
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