SHORTWAVE INFRARED ORGANIC PHOTODIODE WITH AN INCREASED DIELECTRIC CONSTANT

摘要

Embodiments of a shortwave infrared organic photodiode (IR) are disclosed. The IR includes a substrate layer. The IR includes a first electrode layer, the first electrode layer disposed on the substrate layer. The IR includes a first interfacial layer, the first interfacial layer disposed on the first electrode layer. The IR includes a bulk heterojunction, the bulk heterojunction disposed on the first interfacial layer. The bulk heterojunction may include an additive with a dielectric constant above a threshold value. The IR includes a second interfacial layer, the second interfacial layer disposed on the bulk heterojunction. The IR includes a second electrode layer, the second electrode layer disposed on the second interfacial layer.