Memory Error Determination Device and Memory Error Determination

摘要

A storage malfunction control device shall be provided which is capable of determining whether an error occurring in a three-dimensional stacked memory is caused by radiation entering the memory.The storage error detection device includes an error detection unit (22),which detects in each of the layers contained in a three-dimensional stacked memory (2) a memory element in which an error occurred, an error position data unit (23),indicating a position of each storage element in which the error occurred in each of the several layers and a unit of destination (24),determines that an error occurring in memory is a soft error due to radiation entering the memory when the position of each memory element where the error occurred is linear across a specified number of layers of several layers, where the specified number is two or more.