A galium tride-silicon structure is revealed in which the two-dimensional electron gas (2DEG) layer is an interrupted layer comprising at least two 2DEG segments. Each of the 2DEG segments is separated by a split from another 2DEG segment. The 2DEG layer can be impoverished by a p-subsidised Gallium nitride layer, which is arranged over a section of an aluminium-Gallium nitride layer. In addition or alternatively, a hole in the structure can be formed through the 2DEG layer,to create a crack in the 2DEG layer. An electrical component shall be positioned over at least one section of a column.
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