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FERROELECTRIC THIN-FILM STRUCTURES, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICES INCLUDING THE FERROELECTRIC THIN-FILM STRUCTURES
FERROELECTRIC THIN-FILM STRUCTURES, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICES INCLUDING THE FERROELECTRIC THIN-FILM STRUCTURES
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机译:铁电薄膜结构,制造方法的方法,以及包括铁电薄膜结构的电子设备
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摘要
A ferroelectric thin-film structure includes at least one first atomic layer and at least one second atomic layer. The first atomic layer includes a first dielectric material that is based on an oxide, and the second atomic layer includes both the first dielectric material and a dopant that has a bandgap greater than a bandgap of the dielectric material.
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