A method for evaluating the gettering ability of a semiconductor wafer and a method for manufacturing a semiconductor wafer using the evaluation method.

摘要

To provide an evaluation method of gettering ability of a silicon wafer capable of evaluating the gettering ability of a semiconductor wafer in consideration of a device formation process.SOLUTION: An evaluation method of gettering ability of a semiconductor wafer according to the present invention includes a first step of preparing a semiconductor wafer that has a gettering source in which stress is generated on the surface layer on the front surface side at room temperature (step S1), a second step of intentionally contaminating the semiconductor wafer with metal impurities (step S2), a third step of performing a heat treatment on the semiconductor wafer (step S3), a fourth step of performing a selective etching process on the surface layer of the semiconductor wafer (step S4), and a fifth step of evaluating the gettering ability depending on whether dislocations are detected at the time of observing the surface subjected to selective etching with an optical microscope (step S5).SELECTED DRAWING: Figure 1