Memory elements with different bias conditions than multiple selection gates

摘要

PROBLEM TO BE SOLVED: To prevent a decrease in operation efficiency in an apparatus including a memory cell string. An apparatus is a pillar extending between a conductive material region and a source, including a first section, a second section, and a third section, the second section being the first. A first containing a column and a conductive material that is installed along the first section of the column and has a side wall at a first distance from the first section of the column, between the sections and the third section. A selection gate of 1 and a second selection gate containing a conductive material installed along a second section of the column and having a side wall at a second distance from the second section of the column and a second of the columns. A memory cell string and a plurality of conductive materials installed along the third section, wherein each conductive material of the plurality of conductive materials includes a side wall at a third distance from the third section of the column. A memory cell string and a plurality of conductive materials in which the distance of 3 is different from each of the first and second distances, and the first and second selection gates receive voltages having different values during the operation of the device. And include. [Selection diagram] Fig. 2F