MANUFACTURING METHODE FOR SILICONCARBIDE SINGLE CRYSTAL

摘要

The present invention is a method of manufacturing a silicon carbide single crystal, wherein the composition of a melt containing silicon (Si), titanium (Ti), molybdenum (Mo) and carbon (C) satisfies the following condition 1, and 1900 of the melt The carbon solubility at ℃ to 2200 ℃ satisfies the condition 2, [Condition 1] 66at% ≤ Si ≤ 70at% 26at% ≤ Ti+Mo ≤30at% 0.8 ≤ Mo/(Ti+Mo) ≤ 0.56 [Condition 2] Carbon solubility(s) ≥ 3 at%, It provides a method for producing a silicon carbide single crystal, wherein the crystal growth rate of the single crystal is 100 μm/h or more based on the growth direction.