Photoresist composition, and photoresist coating, method of manufacturing etched photoresist coating and etched Si-containing layer(s), and method of manufacturing devices using them

摘要

The present invention relates to a photoresist composition comprising a polymer(s), a photo acid generator(s), (C) a compound(s) comprising a unit EO and a unit PO, and a solvent(s). In addition, the present invention relates to a photoresist coating, an etched photoresist coating and a method of making the etched Si-containing layer(s). Further, the present invention relates to a method of manufacturing a device.