Spin-orbit torque type magnetization rotating element, spin-orbit torque type magnetoresistive element and magnetic memory

摘要

This spin-orbit torque-type magnetization rotating element (100) of the present application comprises: a first ferromagnetic layer (10); and a spin-orbit torque wiring (20) facing the first ferromagnetic layer and extending in a first direction (X). The spin-orbit torque wiring has a plurality of atomic planes (L) in which atoms (A) are arranged, and the plurality of atomic planes have reference surfaces (L1) in which the same atoms are arranged, and a buckling surface (L2) having a buckling part (BP). The buckling surface has a plurality of first atoms (A1) forming a main surface (MP) substantially parallel to the reference surfaces and one or more second atoms (A2) forming a buckling part bent toward the main surface.