INFRARED BANDPASS FILTER STRUCTURE AND INFRARED BANDPASS FILTER USING THE STRUCTURE

摘要

An infrared bandpass filter structure is formed by alternately stacking a plurality of silicon aluminum hydride layers and a plurality of low-refractive-index layers. The plurality of low-refractive-index layers include oxide. The infrared bandpass filter structure has a pass band that at least partly overlaps the wavelength range of 800 nm-1600 nm. The pass band have a center wavelength, and the center wavelength has a magnitude of shift that is less than 11 nm when an incident angle changes from 0° to 30. An infrared bandpass filter includes the infrared bandpass filter structure formed on a first side surface of a substrate and an antireflection layer formed on a second side surface of the substrate that is at a side opposite to the first side surface.