首页> 外国专利> STRUCTURE AND METHOD OF MANUFACTURE FOR ACOUSTIC RESONATOR USING IMPROVED FABRICATION CONDITIONS, PERIMETER STRUCTURE MODIFICATIONS, AND THIN FILM TRANSFER PROCESS

STRUCTURE AND METHOD OF MANUFACTURE FOR ACOUSTIC RESONATOR USING IMPROVED FABRICATION CONDITIONS, PERIMETER STRUCTURE MODIFICATIONS, AND THIN FILM TRANSFER PROCESS

机译:声学谐振器的制造结构和方法,使用改进的制造条件,周边结构修改和薄膜转移过程

摘要

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
机译:一种用于声学谐振器或过滤装置的制造方法。在一个示例中,本方法可以包括形成具有不同几何区域的金属电极和耦合到覆盖基板的压电层的轮廓形状。这些金属电极也可以形成在压电层或基板的空腔内,其具有不同的几何区域。结合具体的尺寸比和离子注入,这种技术可以增加设备性能度量。在一个示例中,本方法可以包括形成围绕金属电极的各种类型的周边结构,其可以位于压电层的顶部或底部。这些周边结构可以使用各种修改的组合来形成形状,材料和连续性。这些周边结构也可以与沙线结构,压电层腔,先前讨论的几何变化组合以改善设备性能度量。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号