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Improvements in or relating to methods of growing quartz crystals

机译:改进或有关生长石英晶体的方法

摘要

Quartz crystals are grown on seed crystals suspended in a vessel capable of withstanding high temperatures and pressures, containing a mass of particles of quartzite, a sample of which shows no blackening in the grains of quartz when irradiated with X-rays, and aqueous medium containing sodium carbonate in a concentration of 0.5 to 3.0 N, the aqueous medium partially filling the vessel so that the ratio of the volume available to it after insertion of the quartzite to the volume filled by it is between 1.18 and 1.46, the vessel being sealed and heated so that the temperature of the aqueous medium is between 320 DEG and 400 DEG C., the solution in the region of the quartzite being at a temperature 5 DEG to 20 DEG C. higher than the solution in the region of the seed crystals, the mass and surface area of the quartzite initially being such that an average daily increase in thickness perpendicular to and on each of the growing faces of the seed crystals is between 0.3 and 1.0 mms. The sample of quartzite is tested as described in Specification 811,213. The vessel, which is a cylindrical steel autoclave with a lid which is bolted in place, is heated on an electric hot plate in a furnace cavity, the temperatures of the solution opposite the quartzite and opposite the seed crystals being measured by thermo-couples strapped to the external surface of the autoclave. The seed crystals are rectangular plates having their major surfaces perpendicular to the Z axis, and are suspended one above the other by platinum wires. The quartzite is crushed into particles and sieved to obtain particles of a size to give the desired rate of growth. Sufficient quartzite is used so that one third remains unused when the crystals have grown to the desired size. The total surface area of the quartzite particles is chosen, after experiment, so that the required temperature difference between the solution around the quartzite and that around the seed crystals, is obtained. Specifications 792,724, 797,203 and 811,215 also are referred to.
机译:石英晶体生长在悬浮在能够承受高温和高压的容器中的晶种上,该容器包含大量的石英岩颗粒,其样品在受到X射线照射后不会在石英颗粒中发黑,并且含有浓度为0.5到3.0 N的碳酸钠,水性介质部分填充容器,以使石英岩插入后可用的体积与填充的体积之比在1.18和1.46之间,容器密封并加热,以使水性介质的温度在320至400℃之间,石英岩区域中的溶液的温度比籽晶区域中的溶液高5至20℃,最初,石英岩的质量和表面积是这样的,即,垂直于籽晶的每个生长面并在其上的每个生长面的平均日厚度增加量为0.3至1.0毫米。如规格811,213中所述测试石英岩样品。该容器是带盖螺栓固定的圆柱形钢制高压釜,在炉腔中的电热板上加热,与石英岩和籽晶相对的溶液温度通过捆扎的热电偶进行测量到高压釜的外表面。种晶是矩形板,其主表面垂直于Z轴,并通过铂丝彼此悬浮。将石英岩粉碎成颗粒并过筛以获得一定尺寸的颗粒,以提供所需的生长速率。使用了足够的石英岩,因此当晶体长到所需的尺寸时,有三分之一仍未使用。在实验之后选择石英岩颗粒的总表面积,以便获得在石英岩周围的溶液和籽晶周围的溶液之间所需的温差。也参考规格792,724、797,203和811,215。

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