Method for the removal of the substantial part of the silicon from aqueous, neutral, preferably alkaline solutions of germanium and silicon

• 1. 用于在晶体管中形成含硅/锗的漏极/源极区域以减少硅/锗损失的方法 [P] . 中国专利： CN101675508B . 2011.08.03
• 2. 用于在晶体管中形成含硅/锗的漏极/源极区域以减少硅/锗损失的方法 [P] . 中国专利： CN101675508A . 2010-03-17
• 3. procedure to remove the major part of the silicon from waessrigen, neutral, preferably alkaline solutions of germanium and silicon [P] . 德国专利： DE000001080990A . 1960-05-05

  机译： 从锗，硅的中性，优选碱性溶液中除去硅的大部分硅的步骤

• 4. Etching solution for simultaneous removal of silicon and silicon-germanium alloys from silicon-germanium / silicon stacks during the manufacture of semiconductor devices [P] . 韩国专利： KR20200051838A . 2020-05-13

  机译： 在半导体器件制造过程中同时从硅锗/硅堆叠中去除硅和硅锗合金的蚀刻溶液

• 5. Removal of silicon values from an aqueous non-acid solution of germanium and siliconvalues [P] . 英国专利： GB802543A . 1958-10-08

  机译： 从非酸性锗和硅酸水溶液中去除硅酸值

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